EGP30GZ [BL Galaxy Electrical]
HIGH EFFICIENCY RECTIFIER; 高效率整流
| 型号： | EGP30GZ |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | HIGH EFFICIENCY RECTIFIER |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
EGP30A(Z) --- EGP30K(Z)
BL
VOLTAGE RANGE: 50 --- 800 V
HIGH EFFICIENCY RECTIFIER
CURRENT: 3.0 A
FEATURES
Low cost
Diffused junction
DO - 27
Low leakage
Low forward voltage drop
High surge current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EGP EGP
30A 30B
EGP EGP EGP EGP
30F 30G 30J 30K
EGP EGP
30C 30D
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
150
105
150
200
140
200
300 400 600 800
210 280 420 560
300 400 600 800
V
V
V
VRRM
VRMS
VDC
Maximum DC blocking voltage
100
Maximum average forw ard rectified current
3.0
A
IF(AV)
9.5mm lead length,
@TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
125.0
A
IFSM
Maximum instantaneous forw ard voltage
@ 3.0 A
0.95
1.25
1.7
75
VF
IR
V
A
Maximum reverse current
@TA=25
5.0
at rated DC blocking voltage @TA=125
Maximum reverse recovery time (Note1)
100.0
50
ns
pF
/W
trr
Typical junction capacitance
Typical thermal resistance
Typical thermal resistance
(Note2)
(Note3)
(Note4)
95
75
CJ
20
Rθ
JA
8.5
Rθ
JL
/W
Operating junction temperature range
- 55 ---- + 150
- 55 ---- + 150
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
4.Thermal resistance junction to lead.
BLGALAXY ELECTRICAL
1.
Document Number 0262010
RATINGS AND CHARACTERISTIC CURVES
EGP30A(Z)---EGP30K(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
50
10
N1.
N1.
+0.5A
D.U.T.
(+)
0
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
0.25A
OSCILLOSCOPE
(NOTE1)
1
(-)
NONIN-
DUCTIVE
-1.0A
1 c m
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
SET TIME BASE FOR 20/30 ns/cm
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
z
100
3.0
EGP30F-EGP30G
TJ=25
Pulse Width=300µS
10
2.0
Single Phase
Half Wave 60Hz
Resistive or
EGP30A-EGP30D
Inductive Load
1.0
0
EGP30J-EGP30K
1
0
25
50
75
100
125
150
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENTTEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
FIG.5 -- PEAK FORWARD SURGE CURRENT
175
175
150
150
125
TJ=25
TJ=125
.
3ms Single Half
Sine-Wave
125
100
100
75
50
25
0
75
50
EGP30A-EGP30D
EGP30F&EGP30K
25
0
0.1
1
4
10
100
1000
1
10
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT60Hz
www.galaxycn.com
BLGALAXY ELECTRICAL
2.
Document Number 0262010
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